Piezoelectric InGaAs/GaAs/AlGaAs quantum well lasers grown on (111)A GaAs by metalorganic vapor phase epitaxy

摘要

This presents the properties of semiconductor double confinement strained PE InGaAs/GaAs/AlGaAs QW laser diodes grown on (111)A GaAs by MOVPE. The QW laser were grown on [111]A-oriented GaAs substrates and were extensively analyzed before laser fabrication by photoluminescence, high-resolution X-ray diffractometry, and transmission electron microscopy and was shown that these strained QWs have excellent interfacial properties and are fully strained without any evidence of strain relaxation. The optical and electrical characteristics of these lasers at low temperature and room temperature lasing in the 1.0-1.1/spl mu/m wavelength region were also presented.