A 4F(2)-cross-point phase change memory using nano-crystalline doped GeSbTe material

摘要

This paper reports on the use of nano-crystalline doped GeSbTe, or nano-GST, to fabricate a cross-point phase change memory with 4F(2) cell size and test results obtained for it. We show the characteristics of a poly-Si diode select device with a high on-off ratio and data writing in a 4F(2) memory cell array. The advantages of nano-GST over conventional GeSbTe are presented in terms of neighboring disturbance and 4F(2) cross-point array formation. The memory cells' high drivability, low power, and selective write and read performances are demonstrated. The scalability of the diode current density is also presented. (C) 2015 The Japan Society of Applied Physics