Heteroepitaxial growth of epsilon-Ga2O3 thin films on cubic (111) MgO and (111) yttria-stablized zirconia substrates by mist chemical vapor deposition

摘要

In this study, epitaxial epsilon-Ga2O3 thin films are successfully grown on cubic (111) MgO and (111) yttria-stablized zirconia (YSZ) substrates by mist chemical vapor deposition. Pure-phase hexagonal epsilon-Ga(2)O(3)thin films are grown on the two substrates with a c-axis orientation determined by X-ray diffraction (XRD) 2 theta-omega scanning. XRD pole figure measurements reveal that the in-plane orientation relationship between the (0001) of epsilon-Ga2O3 and the (111) of the two substrates is epsilon-Ga2O3 [1010] parallel to substrates [(1) over bar(1) over bar2] Using (111) MgO substrates with a 2.5% lattice mismatch, the epitaxial epsilon-Ga2O3 films are successfully grown at a low temperature of 400 degrees C. The optical direct and indirect bandgaps of pure epsilon-Ga2O3 thin films are estimated as 5.0 and 4.5 eV, respectively. (C) 2016 The Japan Society of Applied Physics