Cubic system of oxide (111) being the method of producing (0001) the monocrystal characteristic thin film of the Hexagonal system substance on the surface oxide cubic system (111)

摘要

PROBLEM TO BE SOLVED: To provide a method for depositing (0001) epitaxial thin film of a hexagonal system substance such as ZnO and a multilayer stacked thin film of the same substance, and the thin film and the multilayer stacked thin film obtained by the method.;SOLUTION: The method of depositing (0001) oriented epitaxial (single-crystalline) thin film is characterized in that the (0001) oriented epitaxial (single-crystalline) thin film of a substance having the hexagonal system crystal structure such as zinc oxide (ZnO) or titanium trioxide (Ti2O3), or ZnO or Ti2O3 converted into a semiconductor by adding a small amount of an other element is deposited on a (111) single crystal substrate of a cubic system oxide by either a physical or chemical film deposition method such as a pulse laser vapor deposition or a plasma CVD method. The method of depositing the multilayer stacked thin film is characterized in that the crystalline multilayer stacked thin film of one substance mentioned above is deposited on the (111) single crystal substrate of the cubic system oxide mentioned above by the above method. The single crystal thin film or the multilayer stacked thin film of one of the substances mentioned above deposited on the surface of (111) substrate of the cubic system oxide by the above mentioned method is also provided.;COPYRIGHT: (C)2002,JPO