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Strain evolution of epitaxial tetragonal-like BiFeO3 thin films on LaAlO3(001) substrates prepared by sputtering and their bulk photovoltaic effect

机译:溅射制备的LaAlO3(001)衬底上外延四方形BiFeO3薄膜的应变演化及其整体光伏效应

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摘要

The structural evolution of high-quality 3.3-73.2-nm-thick tetragonal-like BiFeO3 (T-BFO) thin films grown on LaAlO3(001) substrates and the bulk photovoltaic effect of the films were investigated. The T-BFO films were grown by rf magnetron sputtering, showing the Peudellosung fringes around the T-BFO (001) diffraction peak in X-ray diffraction theta-2 theta patterns. These indicate the structural coherence between the surface and the interface in the surface normal direction of the films. High-resolution synchrotron X-ray diffraction analysis and transmission electron microscopy reveal that the lattice relaxation behavior from the M-A monoclinic to M-C monoclinic structure occurs as the film thickness increases. The domain structure was partly controlled by using a vicinal LAO (001) substrate along [100]. Regarding the current-voltage characteristics of the Pt/T-BFO/Pt coplanar capacitor under violet laser illumination, T-BFO films show an anomalous photovoltaic effect with an open-circuit voltage of 6.1V and a short-circuit current of -290 pA along the [100](T-BFO) direction. (C) 2016 The Japan Society of Applied Physics
机译:研究了在LaAlO3(001)衬底上生长的高质量3.3-73.2 nm厚的四方形BiFeO3(T-BFO)薄膜的结构演变以及该薄膜的整体光电效应。 T-BFO膜通过射频磁控溅射生长,在X射线衍射theta-2 theta图案中,在T-BFO(001)衍射峰周围显示Peudellosung条纹。这些表明在膜的表面法线方向上表面和界面之间的结构连贯性。高分辨率同步加速器X射线衍射分析和透射电子显微镜显示,随着膜厚的增加,从M-A单斜晶到M-C单斜晶结构发生晶格弛豫行为。沿[100]使用邻域LAO(001)底物部分控制了畴结构。关于紫色激光照射下Pt / T-BFO / Pt共面电容器的电流-电压特性,T-BFO膜表现出异常的光伏效应,其开路电压为6.1V,短路电流为-290 pA沿[100](T-BFO)方向。 (C)2016年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2016年第10期|101501.1-101501.9|共9页
  • 作者单位

    Univ Hyogo, Grad Sch Engn, Dept Elect & Comp Sci, Himeji, Hyogo 6712201, Japan;

    Univ Hyogo, Grad Sch Engn, Dept Elect & Comp Sci, Himeji, Hyogo 6712201, Japan;

    Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648603, Japan;

    Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648603, Japan;

    Univ Hyogo, Grad Sch Engn, Dept Elect & Comp Sci, Himeji, Hyogo 6712201, Japan;

    NIMS, SPring 8, Synchrotron Xray Stn, Sayo, Hyogo 6795148, Japan;

    NIMS, SPring 8, Synchrotron Xray Stn, Sayo, Hyogo 6795148, Japan;

    Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648603, Japan;

    Univ Hyogo, Grad Sch Engn, Dept Elect & Comp Sci, Himeji, Hyogo 6712201, Japan;

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