High resolution characterizations of fine structure of semiconductor device and material using scanning nonlinear dielectric microscopy

摘要

Scanning nonlinear dielectric microscopy (SNDM) can easily distinguish the dopant type (PN) and has a wide dynamic range of sensitivity from low to high concentrations of dopants, because it has a high sensitivity to capacitance variation on the order of 10(-22) F/root HZ. It is also applicable to the analysis of compound semiconductors with much lower signal levels than Si. We can avoid misjudgments from the two-valued function (contrast reversal) problem of dC/dV signals. Under an ultrahigh-vacuum condition, SNDM has atomic resolution. As the extended versions of SNDM, super-higher-order SNDM, local-deep-level transient spectroscopy, noncontact SNDM, and scanning nonlinear dielectric potentiometory have been developed and introduced. The favorable features of SNDM originate from its significantly high sensitivity. (C) 2017 The Japan Society of Applied Physics