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Effect of Diluted Colloidal Silica Slurry Mixed with Ceria Abrasives on CMP Characteristic

机译:稀释的胶体二氧化硅浆料与二氧化铈磨料混合对CMP特性的影响

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摘要

In this paper, we have studied the CMP characteristics of mixed abrasive slurry (MAS) retreated by adding of ceria abrasives within 1:10 diluted silica slurry (DSS). We focused on how these mixed ceria abrasives affect the material removal in order to determine the optimal recipe conditions through the correlation between the mixed contents of ceria abrasives and CMP performances. The slurry designed for optimal performance should produce reasonable removal rates, acceptable polishing selectivity with respect to the underlying layer, low surface defects after polishing, and good slurry stability. The modified abrasives in MAS are evaluated with respect to their particle size distribution, surface morphology, and CMP performances such as removal rate and non-uniformity. As a result, the oxide CMP process using diluted mixed abrasive slum; has problems of higher material removal rate at wafer center But, we solved the questions in consecutive order by pH control. We obtained the comparable slurry, characteristics to original silica slurry in the viewpoint of high removal rate and low non-uniformity. Finally, our proposed ceria-MAS can be useful to save a slurry consumption of high cost since we used 1:10 diluted mixed abrasive slurry.
机译:在本文中,我们研究了通过在1:10稀释的二氧化硅浆料(DSS)中添加二氧化铈磨料来处理的混合磨料浆料(MAS)的CMP特性。我们专注于这些混合的二氧化铈磨料如何影响材料去除,以便通过二氧化铈磨料的混合含量与CMP性能之间的相关性确定最佳配方条件。为获得最佳性能而设计的浆料应产生合理的去除率,相对于下层的可接受的抛光选择性,抛光后的低表面缺陷以及良好的浆料稳定性。对MAS中的改性磨料进行了粒度分布,表面形态和CMP性能(如去除率和不均匀性)方面的评估。结果,氧化物CMP工艺使用了稀释的混合磨料贫民窟;在晶片中心有较高的材料去除率的问题,但是,我们通过pH控制连续解决了这些问题。从高去除率和低不均匀性的观点来看,我们获得了与原始二氧化硅浆料相当的浆料,特性。最后,由于我们使用了1:10稀释的混合磨料浆,因此我们提出的二氧化铈-MAS可以节省大量的浆液消耗。

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