首页> 外国专利> CMP SLURRY COMPOSITION FOR COPPER DAMASCENE PROCESS, COMPRISING HIGHLY PURE COLLOIDAL SILICA AS AN ABRASIVE WITH HIGH DISPERSION STABILITY

CMP SLURRY COMPOSITION FOR COPPER DAMASCENE PROCESS, COMPRISING HIGHLY PURE COLLOIDAL SILICA AS AN ABRASIVE WITH HIGH DISPERSION STABILITY

机译:铜镶嵌工艺的CMP浆料组合物,由高纯度胶体二氧化硅组成,具有高分散稳定性

摘要

PURPOSE: A CMP slurry composition for copper damascene process is provided to reduce defect generation rate of scratch, to suppress influence of device by impurities, and to remove dishing or erosion generated during first grinding.;CONSTITUTION: A secondary CMP slurry composition of a copper-containing substrate comprises: colloidal silica prepared by directly oxidizing silicon(Si) powder; a complexing agent; and aminoalcohol. The colloidal silica is prepared by oxidizing silicon powder in an aqueous solution in the presence of base catalyst. The colloidal silica has 5-200 nm average particle diameter and is included in the amount of 0.1-20 weight% based on the total amount of the slurry.;COPYRIGHT KIPO 2010
机译:用途:提供一种用于铜镶嵌工艺的CMP浆料组合物,以降低划痕的缺陷产生率,抑制杂质对器件的影响,并消除第一次研磨时产生的凹陷或腐蚀。含底物包括:通过直接氧化硅(Si)粉末制备的胶体二氧化硅;和络合剂;和氨基醇。胶体二氧化硅是通过在碱催化剂存在下在水溶液中氧化硅粉而制备的。胶态二氧化硅的平均粒径为5-200 nm,其含量占浆液总量的0.1-20 wt%。;COPYRIGHT KIPO 2010

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