- Chemical Mechanical Polishing Slurry Composition Having Improved Dispersion Stability of Colloidal Silica and Decomposition Stability of Peroxide Oxidizing Agent on Copper Metallization Process

摘要

PURPOSE: A chemical mechanical polishing slurry composition for a copper wire is provided, to improve the dispersion stability of colloidal silica and the degradation stability of a peroxide-based oxidizing agent in an acidic region. CONSTITUTION: The chemical mechanical polishing slurry composition comprises 0.1-20.0 wt% of a colloidal silica polishing agent; 0.1-10 wt% of a peroxide-based oxidizing agent; 0.1-5 wt% of an organic acid; water; and optionally an insulating layer polishing inhibitor, and has a pH of 2-6. Preferably the peroxide-based oxidizing agent is selected from the group consisting of hydrogen peroxide, peroxydicarbonate, octanoyl peroxide, acetyl benzoyl peroxide and their mixtures; the organic acid is selected from the group consisting of tartaric acid, citric acid, oxalic acid, benzoic acid, garlic acid, propionic acid, malic acid and their mixtures; and the insulating layer polishing inhibitor is selected from the group consisting of polyethyleneimine, polypropyleneimine, polybutyleneimine and their mixtures.