Electrical behaviour and analytical modelling of I-V and C-V characteristics of Schottky barrier diode based on nitrided InP(100)

摘要

In this paper, electrical characterisation and analytical modelling of current-voltage (I-V) and capacitance-voltage (C-V) for Hg/InN-InP Schottky structures are investigated. We have studied electrically thin InN films realised by the nitridation of InP(100) substrates using a glow discharge source (GDS) in ultra high vacuum. So, we have calculated, using I-V and C-V measurements, the ideality factor n, the saturation current I_s, the barrier height φ_(bn), the series resistance R_s, the doping concentration N_d and the diffusion voltage V_d. We have also established analytical calculation programmes of I-V and C-V curves in order to show the effect of the interface layer InN and series resistance R_s on the calculated parameters.