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GALLIUM NITRIDE OR OTHER GROUP III/V-BASED SCHOTTKY DIODES WITH IMPROVED OPERATING CHARACTERISTICS
GALLIUM NITRIDE OR OTHER GROUP III/V-BASED SCHOTTKY DIODES WITH IMPROVED OPERATING CHARACTERISTICS
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机译:氮化镓或其他基于III / V族的肖特基二极管,具有改善的工作特性
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摘要
A semiconductor device includes a first Group III/V layer and a second Group III/V layer over the first Group III/V layer. The first and second Group III/V layers are configured to form an electron gas layer. The semiconductor device also includes a Schottky electrical contact having first and second portions. The first portion is in sidewall contact with the electron gas layer. The second portion is over the second Group III/V layer and is in electrical connection with the first portion of the Schottky electrical contact. The first portion of the Schottky electrical contact and the first or second Group III/V layer can form a Schottky barrier, and the second portion of the Schottky electrical contact can reduce an electron concentration near the Schottky barrier under reverse bias.
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