Refractory Metal Nitride Schottky Contact on GaN

摘要

For thermally stable or high-temperature operating,Schottky contact utilizing refractory metal nitride,TiN,MoN and ZrN,on n-GaN were evaluated.The refractory metal nitride films were formed by reactive sputtering in Ar and N2 ambient.Current-voltage characteristics show that ideality factors of 1.09-1.22 and barrier heights of 0.66-0.75 eV was obtained for the three metal nitrides.For the ZrN contact,the ideality factor and barrier height of became 1.06 and 0.77 eV,respectively,after 800 ℃ annealing.AlGaN/GaN heterostructure FET with TiN gate was also investigated.No obvious degradation was found for the TiN-gate device even after thermal treatment at 850 ℃.This shows that Schottky contact utilizing refractory metal nitride on GaN has the potential for thermal stability or high-temperature operating.