A low power RFID based energy harvesting temperature resilient CMOS-only reference voltage

摘要

In this work a low power consumption reference voltage in commercial 40 nm technology is proposed. It adopts a new approach to produce a temperature invariant reference voltage for outdoor RFID applications. To do so, the positive temperature coefficient (TC) of the produced output voltage of a Dickson charge pump is used to cancel out the negative temperature coefficient of the threshold voltage (V-th) of CMOS devices. The result is, according to the post-layout Cadence simulation, a 1.224 V reference voltage with a TC of 60 ppm degrees C-1 in the temperature range of -10 degrees C to 125 degrees C. The circuit consumes 7 nW with an active area of 0.00033 mm(2).