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A Bayesian Approach to Diameter Estimation in the Diameter Control System of Silicon Single Crystal Growth

机译:硅单晶生长直径控制系统中的贝叶斯估计方法

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In the diameter control system of silicon single crystal growth, the variation of the diameter of the aperture (i.e., a halo with high brightness, which appears at the junction of a solid crystal and a liquid solution) is consistent with the change in the diameter of the growing crystal. Therefore, the diameter of the aperture can be used as a control variable for adjusting the casting speed and temperature so that the grown silicon single crystal approximates to a perfect cylinder. It is obvious that the measured diameter of the current aperture plays an important role in the diameter control system of silicon single crystal growth. In fact, the obtained aperture image from a charge-coupled device camera is a halo of ellipses instead of circles. To estimate the diameter (or radius) of the elliptical aperture, we propose a Bayesian approach, in which a Bayesian model is derived to define a posterior distribution for the unknown parameters. This distribution is too complicated for analytical extraction of moments to sample directly. An efficient computational algorithm based on a Markov chain Monte Carlo method is derived to estimate the posterior distribution and draw samples from the distribution. Comparing with the classical Hough transform-based algorithm and the direct least-squares fitting method, the proposed algorithm has higher estimation accuracy. Some simulated and experimental examples are presented to illustrate the algorithm's effectiveness.
机译:在硅单晶生长的直径控制系统中,孔径的变化(即,高亮度的光晕出现在固态晶体和液体的结合处)与直径的变化一致生长的晶体。因此,孔的直径可以用作用于调节铸造速度和温度的控制变量,使得生长的硅单晶近似于理想的圆柱体。显然,电流孔径的测量直径在硅单晶生长的直径控制系统中起着重要作用。实际上,从电荷耦合设备照相机获得的光圈图像是椭圆的光环而不是圆圈。为了估计椭圆孔的直径(或半径),我们提出了一种贝叶斯方法,其中导出贝叶斯模型以定义未知参数的后验分布。这种分布太复杂了,无法直接提取矩进行分析提取。推导了一种基于马尔可夫链蒙特卡罗方法的高效计算算法,用于估计后验分布并从该分布中抽取样本。与经典的基于霍夫变换的算法和直接最小二乘拟合方法相比,该算法具有更高的估计精度。给出了一些仿真和实验示例,以说明该算法的有效性。

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