METHOD AND DEVICE FOR GROWING SMALL-DIAMETER SILICON CARBIDE SINGLE CRYSTAL FROM LARGE-DIAMETER SILICON CARBIDE SINGLE CRYSTAL GROWTH DEVICE

摘要

The present invention relates to a method for growing silicon carbide, and more specifically to a method for growing a small-diameter silicon carbide single crystal from a large-diameter silicon carbide single crystal growing device, comprising the steps of: placing a crucible in a chamber, charging silicon carbide powder into a lower portion of the crucible, and fixing a silicon carbide single crystal seed on an upper portion of the crucible; heating the chamber to vaporize the silicon carbide powder; and growing the vaporized silicon carbide powder from the seed fixed on the upper portion of the crucible to the silicon carbide single crystal. The crucible has an intermediate diameter of a size corresponding to the diameter of the growing silicon carbide. The crucible is one of a plurality of crucibles sequentially placed in the direction in which the intermediate diameter inside the crucible decreases from the outermost crucible with the largest intermediate diameter among the crucibles that can be placed in the chamber.;COPYRIGHT KIPO 2017