Method and apparatus for sublimation growth of silicon carbide single crystal (PROCESS AND DEVICE FOR SUBLIMATION GROWING SILICON CARBIDE MONOCRYSTALS)

摘要

the reaction chamber (2) and a top wall (20) of the ring, the wall (2), at least one of the reaction room (2), the internal CVD project (21) is made of a carbide is composed. the wall (20) of the silicon carbide of at least a part of the distillation can be decided (3) on a silicon carbide single crystal (4) - growth.