The v/G criterion for defect-free silicon single crystal growth from a melt revisited: Implications for large diameter crystals

摘要

Traditionally the critical value Γ_(crit) of the ratio Γ of the pulling speed v over the thermal gradient G at the melt-solid interface needed to grow defect free silicon is assumed to be a constant for a given crystal doping and resistivity. Recently it was however shown that Γ_(crit) depends on stress and thus also on G, in particular on its derivative with respect to the distance from the melt-solid interface. As G also depends on v, a process window exists for the critical pulling speed which depends both on the crystal radius and on Γ_(crit). The implications for the development of pulling processes for large diameter defect free silicon crystals are discussed.