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Virtual plasma equipment model: a tool for investigating feedbackcontrol in plasma processing equipment

机译:虚拟等离子设备模型:调查等离子处理设备中反馈控制的工具

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As microelectronics device feature sizes continue to shrink andnwafers continue to increase in size, it is necessary to have tighterntolerances during the fabrication process to maintain high yields.nFeedback control has, therefore, become an important issue in plasmanprocessing equipment design; comprehensive plasma equipment modelsnlinked to control algorithms would greatly aid in the investigation andnoptimal selection of control strategies. This paper reports on annumerical plasma simulation tool, the virtual plasma equipment modeln(VPEM), which addresses this need to test feedback control strategiesnand algorithms on plasma processing equipment. The VPEM is an extensionnof the hybrid plasma equipment model which has been augmented by sensorsnand actuators, linked together through a programmable controller. Thensensors emulate experimental measurements of species densities, fluxes,nand energies, while the actuators change process parameters such asnpressure, inductive power, capacitive power, electrode voltages, andnmole fraction of gases. Controllers were designed using a responsensurface based methodology. Results are presented from studies in whichnthese controllers were used to compensate for a leak of N2ninto an Ar discharge, to stably control drifts in process parametersnsuch as pressure and power in Ar and Ar/Cl2, and to nullifynthe effects of long term changes in wall conditions in Cl2ncontaining plasmas. A new strategy for improving the ion energy fluxnuniformity in capacitively coupled discharges using feedback controlntechniques is also explored
机译:随着微电子器件特征尺寸的不断缩小和晶片尺寸的不断增加,在制造过程中必须具有更严格的公差以保持高成品率。因此,反馈控制已成为等离子处理设备设计中的重要问题。链接到控制算法的综合等离子设备模型将大大有助于控制策略的研究和最佳选择。本文报告了一种等离子体等离子模拟工具,即虚拟等离子设备模型(VPEM),它满足了在等离子处理设备上测试反馈控制策略和算法的需求。 VPEM是混合等离子体设备模型的扩展,该模型已通过传感器和执行器进行了扩展,并通过可编程控制器链接在一起。然后,传感器模拟物种密度,通量,能量和能量的实验测量值,而执行器则改变过程参数,例如正压,感应功率,电容功率,电极电压和气体的纳摩尔比。使用基于responsensurface的方法设计控制器。研究结果表明,使用这些控制器补偿N2泄漏到Ar放电中,稳定控制过程参数(例如Ar和Ar / Cl2中的压力和功率)的漂移,并消除壁条件长期变化的影响在含Cl2n的血浆中。还探索了一种使用反馈控制技术改善电容耦合放电中离子能量通量均匀性的新策略。

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