首页> 外国专利> PLASMA DENSITY INFORMATION MEASURING METHOD AND ITS EQUIPMENT, AND PROBE FOR PLASMA DENSITY INFORMATION MEASUREMENT, PLASMA PROCESSING METHOD AND ITS EQUIPMENT

PLASMA DENSITY INFORMATION MEASURING METHOD AND ITS EQUIPMENT, AND PROBE FOR PLASMA DENSITY INFORMATION MEASUREMENT, PLASMA PROCESSING METHOD AND ITS EQUIPMENT

机译:等离子体密度信息测量方法及其设备,以及等离子体密度信息测量,等离子体处理方法及其设备的探针

摘要

PROBLEM TO BE SOLVED: To measure plasma density information with sufficient accuracy according to various plasma generating conditions.;SOLUTION: Observing easily absorbing points according to various plasma generating conditions can measure the plasma density information, such as electron density with sufficient accuracy, by choosing measurement probes 5 (measurement probe 5a, 5b, 5c, and so forth) according to plasma generating conditions by a measurement probe changing part 8a, while providing two or more measurement probe 5a, 5b, 5c, and so forth, which have different dielectric constants of tubes mutually in a chamber 1. Based on the measurement result of the plasma density information, plasma processing of etching or the like is easily and appropriately controlled by an electric power control part 4 for generation. Especially, constituting the tube from substances having 15 or more of dielectric constant ratios, can observe absorption points having strong absorption.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:根据各种等离子体产生条件以足够的精度测量等离子体密度信息;解决方案:根据各种等离子体产生条件观察易于吸收的点,可以通过选择适当的精度来测量等离子体密度信息,例如电子密度测量探针改变部分8a根据等离子体产生条件根据测量探针5(测量探针5a,5b,5c等),同时提供两个或更多个具有不同电介质的测量探针5a,5b,5c等。腔室1中的管彼此之间的常数是恒定的。基于等离子体密度信息的测量结果,通过发电用电力控制部4容易且适当地控制蚀刻等的等离子体处理。特别是用介电常数比为15以上的物质构成管子时,可以观察到吸收性强的吸收点。版权所有:(C)2002,日本特许厅

著录项

  • 公开/公告号JP2002216998A

    专利类型

  • 公开/公告日2002-08-02

    原文格式PDF

  • 申请/专利权人 NISSHIN:KK;

    申请/专利号JP20010014609

  • 发明设计人 NANKO SHOHEI;TOYODA NAOKI;

    申请日2001-01-23

  • 分类号H05H1/00;C23C16/52;H01L21/205;H01L21/3065;H05H1/46;

  • 国家 JP

  • 入库时间 2022-08-22 00:55:24

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