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首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Parametric manufacturing yield modeling of GaAs/AlGaAs multiple quantum well avalanche photodiodes
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Parametric manufacturing yield modeling of GaAs/AlGaAs multiple quantum well avalanche photodiodes

机译:GaAs / AlGaAs多量子阱雪崩光电二极管的参数化制造良率建模

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GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APD's) are of interest as an ultra-low noise image capture mechanism for high-definition systems. Since literally millions of these devices must be fabricated for imaging arrays, it is critical to evaluate potential performance variations of individual devices in light of the realities of semiconductor manufacturing. Specifically, even in a defect-free manufacturing environment, random variations in the fabrication process will lead to varying levels of device performance, Accurate device performance prediction requires precise characterization of these variations. This paper presents a systematic methodology for modeling the parametric performance of GaAs MQW APD's. The approach described requires a model of the probability distribution of each of the relevant process variables, as well as a second model to account for the correlation between this measured process data and device performance metrics. The availability of these models enables the computation of the joint probability density function required for predicting performance using the Jacobian transformation method. The resulting density function can then be numerically integrated to determine parametric yield. Since they have demonstrated the capability of highly accurate function approximation and mapping of complex, nonlinear data sets, neural networks are proposed as the preferred tool for generating the models described above. In applying this methodology to MQW APD's, it is shown that using a small number of test devices with varying active diameters, barrier and well widths, and doping concentrations enables prediction of the expected performance variation of APD gain and noise in larger populations of devices. This approach compares favorably with Monte Carlo techniques and allows device yield prediction prior to high volume manufacturing in order to evaluate the impact of both design decisions and process capability.
机译:GaAs / AlGaAs多量子阱(MQW)雪崩光电二极管(APD's)作为高清系统的超低噪声图像捕获机制受到关注。由于必须为成像阵列制造数以百万计的这些设备,因此根据半导体制造的实际情况评估单个设备的潜在性能变化至关重要。具体地说,即使在无缺陷的制造环境中,制造过程中的随机变化也将导致器件性能的变化。准确的器件性能预测需要对这些变化进行精确的表征。本文提出了一种用于建模GaAs MQW APD参数性能的系统方法。所描述的方法需要每个相关过程变量的概率分布模型,以及第二个模型,以说明此测量过程数据与设备性能指标之间的相关性。这些模型的可用性允许使用Jacobian变换方法计算预测性能所需的联合概率密度函数。然后可以对所得的密度函数进行数值积分以确定参数产量。由于它们已经证明了对复杂的非线性数据集进行高精度的函数逼近和映射的能力,因此提出了将神经网络作为生成上述模型的首选工具。在将此方法应用于MQW APD时,表明使用少量具有变化的有源直径,势垒和阱宽度以及掺杂浓度的测试设备可以预测更大数量的设备中APD增益和噪声的预期性能变化。这种方法与蒙特卡洛技术相比具有优势,并且可以在大批量生产之前进行器件成品率预测,以便评估设计决策和工艺能力的影响。

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