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Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

机译:掺杂GaAs / AlGaAs多量子阱雪崩光电二极管结构的增益特性

摘要

A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDS, and to both electron and hole ionization in the conventional APDS. For the doped MQW APDS, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.
机译:已经对常规和多量子阱(MQW)雪崩光电二极管(APD)的静态和动态响应进行了全面的表征。 MQW和传统APD在低压下的增益特性比较表明,由于带间碰撞电离,结构诱导的载流子倍增的直接实验证实。对多余噪声特性的偏置依存关系的类似研究表明,低电压增益主要是由于MQW-APDS中的电子电离,以及常规APDS中的电子电离和空穴电离。对于掺杂的MQW APDS,通过将增益数据与载波分布测量结果进行比较,计算出每级的平均增益,发现其范围从低偏置时的1.03到雪崩击穿时的1.09不等。

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