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首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Effect of Minute Bends and/or Kinks of Wire Bond Profile on Sag Deflection for 3-D and Multichip Module Semiconductor Packaging
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Effect of Minute Bends and/or Kinks of Wire Bond Profile on Sag Deflection for 3-D and Multichip Module Semiconductor Packaging

机译:微小弯曲和/或焊线弯曲对弯曲变形的影响,用于3-D和多芯片模块半导体封装

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摘要

Wire sag and wire sweep developed during encapsulation process are counted for the lower yield rate of chip packaging in semiconductor industry. For conventional packaging, only one single layer of wire bond was constructed along the perimeter of chip system. The issue of wire sag is not a concern until 3-D and multi-chip modules packaging prevails due to the desperate demands of smaller and faster advanced microelectronics devices. Very few researches have been documented on this subject of sag deflection. An empirical equation based upon major profile parameters of a wire bond has been developed by author to predict sag deflection of ellipse shape wire bond. However, the effect of minute bends and/or kinks of wire bond profile on sag deflection has not been included. In this paper, we investigate three frequently used wire bond loops, loop, loop, and (modified) loop, to look into these minor characteristics of wire bond profile as compared to bond span and bond height. Based on current results, we find that these minute features may dominate the response of sag deflection of a wire bond.
机译:在封装过程中出现的线垂和线扫被认为是半导体工业中芯片封装的较低良率。对于常规封装,沿着芯片系统的周边仅构造了一层单键合引线。由于更小,更快的先进微电子设备的迫切需求,直到3D和多芯片模块封装盛行之前,才不会出现线垂问题。关于下垂变形的文献很少。作者开发了基于线键合主要轮廓参数的经验方程式,以预测椭圆形线键合的下垂挠度。但是,还没有包括弯折和/或引线键合轮廓的扭结对下垂挠度的影响。在本文中,我们研究了三个常用的引线键合环,环,环和(修改的)环,以研究与键跨和键合高度相比,线键合曲线的这些次要特征。根据目前的结果,我们发现这些微小的特征可能主导着引线键合的下垂变形。

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