首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Imaging of Metal Ions and Nanoparticles on Structured Silicon Surface Using Laser Ablation-Inductively Coupled Plasma-Mass Spectrometer for Contamination Control in Semiconductor Manufacturing Process
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Imaging of Metal Ions and Nanoparticles on Structured Silicon Surface Using Laser Ablation-Inductively Coupled Plasma-Mass Spectrometer for Contamination Control in Semiconductor Manufacturing Process

机译:使用激光烧蚀电感耦合等离子体质谱仪在结构化硅表面上的金属离子和纳米颗粒的成像,用于污染半导体制造过程中的污染

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摘要

In this study, the imaging of metal ions and nanoparticles deposited on a structured silicon surface was investigated using a laser ablation-inductively coupled plasmamass spectrometry (LA-ICP-MS). For application, 8 x 8 Petridish pillars, each with a diameter of 250 mu m and height of 300 mu m, were constructed on a silicon wafer. The etched pillar surface took a droplet of approximately 4.3 nL aqueous solution from a capillary tip through the surface-liquid attraction. The dissolved materials were found at the intersecting edge of pillar bottom after evaporation, and their positions were matched with the peaks of elements in the mass spectrum for imaging. Results suggest that the trace contaminants in the cleaning solution are gathered at the intersecting edges of the patterned wafer, and the multi-elemental images of the contaminants can be successfully obtained using LA-ICP-MS.
机译:在该研究中,使用激光烧蚀电感耦合的纤维素光谱法研究(La-ICP-MS),研究了金属离子和沉积在结构硅表面上的纳米颗粒的成像。 对于应用,在硅晶片上构建了8×8的直径,每个直径为250μm和300μm的挡板柱。 蚀刻的柱表面通过表面液吸引从毛细管尖端取出约4.3nl水溶液的液滴。 在蒸发之后在柱底的交叉边缘发现溶解的材料,并且它们的位置与质谱中的元素的峰匹配以进行成像。 结果表明,清洁溶液中的痕量污染物在图案化晶片的交叉边缘处聚集,并且可以使用LA-ICP-MS成功获得污染物的多元素图像。

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