The effect of power supply voltage scaling on the total dose radiation response of fully-depleted SOI MOS transistors

摘要

The radiation induced front channel threshold voltage shift (/spl Delta/V/sub tl/) of fully-depleted MOSFETs fabricated in SIMOX is investigated and analyzed as a function of power supply voltage (V/sub DD/) from 5.5 to 1.2 volts. This work shows that the expected improvement in front channel radiation hardness by reducing V/sub DD/ is not fully realized due to (1) a radiation induced off-set voltage at V/sub DD//spl sim/0 V, and (2) enhanced coupling of the buried oxide charge to the front channel.