A Deep Level Transient Spectroscopy Study of Electron and Proton Irradiated GaAs Diodes

摘要

Defects produced by 0.6 MeV, 1 MeV and 5 MeV electrons are compared with those produced by 2 MeV proton irradiations in ${hbox {p}} ^{+} {hbox {n}}$ GaAs diodes using Deep Level Transient Spectroscopy (DLTS). Following 0.6 and 1 MeV electron irradiation, the measured DLTS spectra matched that of the literature. After 5 MeV electron irradiation, however, a new DLTS peak was observed. The new peak is located on the low temperature side of the common E3 peak. This new electron-induced DLTS peak is assigned to be the same peak produced by proton irradiation and commonly labeled PR4$^{primeprime}$ . Further analysis of the DLTS data indicate that the PR4$^{primeprime}$ peak is independent of the displacement damage dose deposited but is dependent on the primary recoil energy.