机译:用深能级瞬态光谱法和少数载流子瞬态光谱法研究生长和电子辐照的n型GaN的深能级
Department of Physics, Chemistry and Biology (IFM), Linkoeping University, S-581 83 Linkoeping, Sweden,School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi, Vietnam;
Department of Physics, Chemistry and Biology (IFM), Linkoeping University, S-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry and Biology (IFM), Linkoeping University, S-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry and Biology (IFM), Linkoeping University, S-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry and Biology (IFM), Linkoeping University, S-581 83 Linkoeping, Sweden;
Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292, Japan;
Department of Physics, Chemistry and Biology (IFM), Linkoeping University, S-581 83 Linkoeping, Sweden;
机译:使用深能级瞬态光谱和少数载流子瞬态光谱技术对掺镁GaN进行深能级研究
机译:通过深能级和少数载流子瞬态光谱研究了碳掺杂的n-GaN的深能级
机译:Si中的孤立Ti:深层瞬态光谱,少数载流子瞬态光谱和高分辨率Laplace深层瞬态光谱研究
机译:深度瞬态透射光谱和少数载体瞬态光谱研究的MOCVD N-GAN中的陷阱
机译:恒定电容深层瞬态光谱法研究(100)和(311)B分子束表型砷化镓深层。
机译:在(100)和(311)B GaAs衬底上生长的GaAs / AlGaAs多量子阱的深层瞬态光谱
机译:生长和电子辐照的p型4H-SiC外延层的深层瞬态光谱