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机译:沟槽电压对沟槽栅极场截止IGBT的中子感应SEB的贡献
Université Montpellier II–IES UMR 5214 CNRS/UM2, Montpellier cedex 5, France;
Electric breakdown; Failure analysis; Insulated gate bipolar transistors; Logic gates; MOSFET; Neutrons; Substrates; Atmospheric neutrons; Single Event Burnout (SEB); Single Event Gate Rupture (SEGR); cross section; gate oxide breakdown; insulated gate bipolar transistor (IGBT); trench gate fieldstop;
机译:沟槽中止IGBT的中子诱发故障的蒙特卡洛建模开发
机译:沟槽屏蔽平面栅极IGBT(TSPG-IGBT),具有自偏置PMOS,实现低导通状态电压和低饱和电流
机译:栅极驱动电压对沟槽IGBT的雪崩鲁棒性的影响
机译:沟槽电压对沟槽栅场截止IGBT中子感应SEB的贡献
机译:沟槽栅穿通IGBT的特性和建模。
机译:S3 Cooh总站的螺旋结构及其对电压门控离子通道中门控修饰剂毒素受体的贡献
机译:沟槽屏蔽平面栅极IGBT(TSPG-IGBT),具有自偏置PMOS,实现低导通状态电压和低饱和电流