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Trench Shielded Planar Gate IGBT (TSPG-IGBT) With Self-Biased pMOS Realizing Both Low On-State Voltage and Low Saturation Current

机译：沟槽屏蔽平面栅极IGBT（TSPG-IGBT），具有自偏置PMOS，实现低导通状态电压和低饱和电流

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Rongxin Chen; Bo Yi; Xing Bi Chen;
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1. Trench Shielded Planar Gate IGBT (TSPG-IGBT) With Self-Biased pMOS Realizing Both Low On-State Voltage and Low Saturation Current [J] . Chen Rongxin, Yi Bo, Chen Xing Bi Electron Devices Society, IEE . 2020,第期

机译：沟槽屏蔽平面栅极IGBT（TSPG-IGBT），具有自偏置PMOS，实现低导通状态电压和低饱和电流
2. A Low On-State Voltage and Saturation Current TIGBT With Self-Biased pMOS [J] . Ping Li, Xinjiang Lyu, Junji Cheng, Electron Device Letters, IEEE . 2016,第11期

机译：具有自偏置pMOS的低导通电压和饱和电流TIGBT
3. Low on-state voltage and saturation current Trench Insulated Gate Bipolar Transistor with integrated Zener diode [J] . Ping Li, Junji Cheng, Xingbi Chen Electronics Letters . 2017,第24期

机译：具有集成齐纳二极管的低通态电压和饱和电流沟槽绝缘栅双极晶体管
4. A low on-state voltage TIGBT with planar gate self-biased pMOS [C] . Ping Li, Haimeng Huang, Xingbi Chen IEEE International Conference on Power Electronics and Drive Systems . 2017

机译：具有平面栅极自偏置pMOS的低导通电压TIGBT
5. A Wide Bandwidth High Power Supply Rejection Ratio PMOS Linear Low-Dropout Regulator with Ultra Low Quiescent Current [D] . Joshi, Kishan. 2020

机译：具有超低静态电流的宽带宽高电源抑制比PMOS线性低压丢失调节器
6. Lucifer Yellow slows voltage-gated Na+ current inactivation in a light-dependent manner in mice [O] . Yoko Higure, Yoshimi Katayama, Keita Takeuchi, 2003

机译：路西法·黄（Lucifer Yellow）以光依赖性方式减缓小鼠的电压门控Na +电流失活
7. New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop [O] . Lophitis N., Antoniou M., Vemulapati U., 2016

机译：高电流可控性和低导通状态压降的新型双模栅极换向晶闸管设计概念
8. Design, construction and operational results of the IGBT controlled solid state modulator high voltage power supply used in the high power RF systems of the Low Energy Demonstration Accelerator of the accelerator production of tritium (APT) project [R] . Bradley, J. T. , Rees, D. , Przeklasa, R. S. , 1998

机译：IGBT控制固态调制器高压电源的设计，构建和运行结果用于氚（apT）项目加速器生产低能示范加速器的高功率射频系统

Trench Shielded Planar Gate IGBT (TSPG-IGBT) With Self-Biased pMOS Realizing Both Low On-State Voltage and Low Saturation Current

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