机译:栅极驱动电压对沟槽IGBT的雪崩鲁棒性的影响
Department of Electrical Engineering and Information Technologies, University of Naples Federico Ⅱ, Italy,Department of Electrical Engineering and Information Technologies, Via Claudio 21, 80125 Naples, Italy;
Department of Electrical Engineering and Information Technologies, University of Naples Federico Ⅱ, Italy;
Department of Electrical Engineering and Information Technologies, University of Naples Federico Ⅱ, Italy;
Department of Electrical Engineering and Information Technologies, University of Naples Federico Ⅱ, Italy;
Toyota Motor Corporation, 543, Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309, Japan;
Trench IGBT; Avalanche breakdown; IR thermography; Termination; Negative Differential Resistance; Gate driver circuit;
机译:沟槽屏蔽平面栅极IGBT(TSPG-IGBT),具有自偏置PMOS,实现低导通状态电压和低饱和电流
机译:沟槽深度对重复雪崩低压低电压离散功率沟槽nMOSFET可靠性的影响
机译:沟槽电压对沟槽栅极场截止IGBT的中子感应SEB的贡献
机译:动态雪崩期间电流灯丝对高压Trench-IGBT的集电极-发射极电压的影响
机译:使用高压IGBT的中压感应电动机驱动器的电压源逆变器选件。
机译:基于新型Volterra k最近邻最优修剪极限学习机(VKOPP)模型的绝缘栅双极晶体管(IGBT)剩余寿命估算
机译:沟槽屏蔽平面栅极IGBT(TSPG-IGBT),具有自偏置PMOS,实现低导通状态电压和低饱和电流