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Electromigration-Induced Failure Characteristics of Spin-Valve Multilayers for Metallic-Based Spintronic Devices

机译:基于金属的自旋电子器件的自旋阀多层的电迁移诱导失效特性

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Electromigration (EM) failure characteristics of patterned NiFe/Cu/NiFe spin-valve (SV) multilayers (MLs) with or without thin Co diffusion barrier inserted at the interface between NiFe and Cu layers have been investigated by applying a constant dc current with different current densities to predict the electrical and magnetic stabilities of metallic SV-based spintronic devices. It was experimentally verified that the Ni–Cu intermixing caused by the EM-induced Cu interdiffusion to the top or bottom NiFe layer plays a dominant role in determining the EM-induced failure characteristics of the NiFe/(Co)/Cu/(Co)/NiFe SV multilayered devices. In addition, it was clearly demonstrated that the interlayer (indirect) exchange coupling field and the magnetic moment of the NiFe/(Co)/Cu/(Co)/NiFe SV-MLs are strongly dependent on the EM-failure induced Ni–Cu intermixing directly relevant to the Cu spacer interdiffusion. The failure mechanism of NiFe/(Co)/Cu/(Co)/NiFe SV multilayered devices showed “bimodal failure characteristics.” The critical current density $(J_{rm c})$ for such a bimodal failure mechanism was found to be determined at $J_{rm c} = hbox{7} times hbox{10}^{7} hbox{A/cm}^{2}$. When $J leq J_{rm c}$, the failure was mainly caused by the electrostatic force (or electron wind force) accelerating an interdiffusion through grain boundaries that leads to forming typical EM failures such as voids and hillocks. Whereas, when $J ≫ J_{ rm c}$, a melting or a vaporization dominantly accelerated by the Joule heating played more significant role and caused the catastrophic failures. The NiFe/Co/Cu/Co/NiFe SV-MLs showed a much longer mean time-to-failure $(t_{50})$ than that of NiFe/Cu/NiFe SV-MLs. This experimental result implies that an ultrathin Co insertion layer is effective to improve the EM-induced failure lifetime due to its restraining effects as a diffusion barrier to prevent Cu interdiffusion to both the top and bottom NiFe layers. Furthermore, this result directly verified that Ni–Cu intermixing is the dominant factor in determining the EM characteristics of the NiFe/Cu/NiFe SV multilayered spintronic devices.
机译:通过施加不同的恒定直流电流,研究了带图案的NiFe / Cu / NiFe自旋阀(SV)多层膜(ML)的电迁移(EM)失效特性,该多层膜具有或不具有插入NiFe和Cu层界面的薄Co扩散势垒。电流密度,以预测基于金属SV的自旋电子器件的电气和磁稳定性。经实验验证,由EM诱导的Cu互扩散到顶部或底部NiFe层引起的Ni-Cu混合在决定EM诱导的NiFe /(Co)/ Cu /(Co)的失效特征中起主导作用。 / NiFe SV多层器件。此外,它清楚地表明,NiFe /(Co)/ Cu /(Co)/ NiFe SV-MLs的层间(间接)交换耦合场和磁矩强烈依赖于EM故障诱发的Ni-Cu与铜间隔物相互扩散直接相关的混合。 NiFe /(Co)/ Cu /(Co)/ NiFe SV多层器件的失效机理表现出“双峰失效特征”。发现这种双峰失效机制的临界电流密度$(J_ {rm c})$确定为$ J_ {rm c} = hbox {7}乘以hbox {10} ^ {7} hbox {A / cm } ^ {2} $。当$ J leq J_ {rm c} $时,失效主要是由于静电力(或电子风力)加速了通过晶界的相互扩散而导致形成典型的EM失效,例如空隙和小丘。而当$ J≫ J_ {rm c} $时,焦耳加热显着促进的熔化或汽化起更重要的作用,并导致灾难性的故障。 NiFe / Co / Cu / Co / NiFe SV-MLs的平均故障时间$(t_ {50})$比NiFe / Cu / NiFe SV-MLs更长。该实验结果表明,超薄Co插入层由于其作为扩散阻挡层的抑制作用而有效地提高了EM诱导的失效寿命,从而防止了Cu在顶部和底部NiFe层之间的相互扩散。此外,该结果直接证明,Ni-Cu的混合是决定NiFe / Cu / NiFe SV多层自旋电子器件的EM特性的主要因素。

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