Charge Pumping, Geometric Component, and Degradation Parameter Extraction in MOSFET Devices

摘要

In this paper, we model the geometric component of a charge-pumping (CP) technique. Base on this proposed model, we have established an analytic equation for charge-pumping current. This equation seems to be a universal one since it is in agreement with CP experimental data of different technologies devices. Instead of the classical considerations regarding a parasitic nature of the geometric component, in this paper, we have demonstrated that it can be used to estimate the negative-bias temperature-instability-induced mobility degradation using the CP-based methods such as on-the-fly interface trap.