Charge pumping at radio frequencies MOSFET device interface state density measurement

摘要

In this work, for the first time, charge pump results are shown that are obtained at frequencies in the GHz range. A comparison is made with charge pump results at lower frequencies. A very good agreement is seen between the low frequency charge pump data and the RF charge pump data. Measurement results on dielectrics that suffer from a high leakage current show that a charge pump current can be measured at frequencies above 500 MHz. At lower frequencies the charge pump current is completely overwhelmed by the leakage current and therefore normal charge pump currents are not usable for measuring the interface state density. This indicates that the RF charge pump technique is very promising for measuring the interface state density on ultra thin dielectrics.