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首页> 外文期刊>IEEE transactions on device and materials reliability >Effect of Different PBO-Based RDL Structures on Chip-Package Interaction Reliability of Wafer Level Package
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Effect of Different PBO-Based RDL Structures on Chip-Package Interaction Reliability of Wafer Level Package

机译:基于PBO的RDL结构对晶圆级封装芯片包装相互作用可靠性的影响

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摘要

In this paper, CPI (chip-package interaction) reliability of WLP (wafer level package) was investigated. PBO (Polybenzoxazole)-based RDL (redistribution layer) structure was the primary focus. Firstly, the stress distribution for PBO structures was studied by simulation. Secondly, two types of the chip with different PBO structures completed the accelerating experiments. Based on our investigation, the results of CPI reliability tests are coincident with the simulation data. It can be applied to the early prediction for the risk level of CPI reliability. Additionally, failure mechanisms were figured out for different PBO structures. Design A has the potential risk to suffer corrosion damage owing to exposed SR (seal ring) and CAS (crack stop). Design B has a four times failure rate in THT (Temperature and Humidity Test), which related to hotspots around SR. These results suggest that protecting SR and relieving hotspots effect will effectively enhance CPI reliability performance of WLP.
机译:本文研究了WLP(晶圆级封装)的CPI(芯片包相互作用)可靠性。基于PBO(聚苯肼恶毒)的RDL(再分配层)结构是主要的焦点。首先,通过模拟研究了PBO结构的应力分布。其次,具有不同PBO结构的两种类型的芯片完成了加速实验。根据我们的调查,CPI可靠性测试的结果与模拟数据一致。它可以应用于CPI可靠性风险水平的早期预测。另外,针对不同的PBO结构设计了故障机制。由于暴露的SR(密封环)和CAS(裂缝停止),设计A具有耐受腐蚀损坏的潜在风险。设计B具有四倍的故障率(温度和湿度测试),与SR周围的热点有关。这些结果表明,保护SR和缓解热点效果将有效提高WLP的CPI可靠性性能。

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