A new grid-generation method for 2-D simulation of devices with nonplanar semiconductor surface

摘要

A general analytical method is proposed for transforming a 2-D multilayer physical domain with the nonplanar semiconductor surface into a 2-D rectangular mathematical domain with a planar surface, with a set of Fourier series being used to describe a general conformal mapping for each layer. Based on the method, a simple iteration algorithm, which incorporates a nonlinear Jacobian-iteration method with the fast Fourier transform (FFT), is developed to solve the system of nonlinear equations due to the mutually coupled boundary conditions. As a result of the analytical conformal mapping, a regular, deformable grid structure can be applied to simulate the device structure with the nonplanar semiconductor surface, and the device simulator using the conventional rectangle-based grid can be easily modified to simulate the device with the nonplanar semiconductor surface.