Compact modeling of on-chip ESD protection devices using Verilog-A

摘要

A practical approach for the compact modeling of electrostatic discharge (ESD) protection devices, using the behavioral language Verilog-A, is presented. Models of the NMOS transistor, the vertical n-p-n transistor, the diode, and the resistor have been developed, suitable for circuit-level simulation. Large-signal and small-signal models are provided for transient and alternating current (ac) simulation, respectively. A self-heating model is included for accurate simulation of the device ON-resistance under transient high-current conditions.