Using Floating Gate and Quasi-Floating Gate Techniques for Rail-to-Rail Tunable CMOS Transconductor Design

摘要

Floating-gate and quasi-floating gate MOS transistors can be efficiently employed to design CMOS transconductors. These transistors allow achievement of relevant features in a compact and simple way, such as rail-to-rail input range, continuous transconductance tuning, and class AB operation. This paper illustrates how these techniques can be applied by employing them in the design of two transconductors, which have been fabricated in a 0.5 $mu hbox{m}$ CMOS process. Measurement results confirm the advantages of the proposed approach.