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首页> 外文期刊>Circuits and Systems I: Regular Papers, IEEE Transactions on >Tunable Class AB CMOS Gm-C Filter Based on Quasi-Floating Gate Techniques
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Tunable Class AB CMOS Gm-C Filter Based on Quasi-Floating Gate Techniques

机译:基于准浮栅技术的可调谐AB类CMOS Gm-C滤波器

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摘要

A tunable CMOS Gm-C channel-select low-pass filter is presented. Class AB operation overcomes the dynamic range versus static power tradeoff of conventional channel-select filter topologies. Programmable transconductors are designed using quasi-floating gate transistors, which provide class AB operation without requiring extra supply voltage or power requirements and keeping accurately set quiescent currents. The filter can be applied to channel selection in highly integrated, low power zero-IF wireless receivers. For example, its frequency tuning range and linearity makes it suitable for a dual-mode Bluetooth/ZigBee zero-IF receiver. Measurement results for a test chip prototype in a 0.5 $mu$m standard CMOS process are presented, showing a ${rm THD} < -55$ dB for an input of 1.2 Vpp, which corresponds to peak currents 300% larger than the bias current.
机译:提出了可调谐CMOS Gm-C通道选择低通滤波器。 AB类操作克服了常规通道选择滤波器拓扑的动态范围与静态功率之间的折衷。可编程跨导体采用准浮栅晶体管设计,可提供AB类工作,而无需额外的电源电压或功率要求,并保持准确设置的静态电流。该滤波器可用于高度集成的低功耗零中频无线接收器中的信道选择。例如,其频率调谐范围和线性度使其适用于双模式Bluetooth / ZigBee零中频接收器。给出了在0.5的标准CMOS工艺中测试芯片原型的测量结果,公式为=。对于1.2 Vpp的输入,“ inline”> $ {rm THD} <-55 $ dB,对应于峰值电流比偏置电流大300%。

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