0.13-µm CMOS tunable transconductor based on the body-driven gain boosting technique with application in Gm-C filters

摘要

We present a low-voltage low-power CMOS tunabletransconductor exploiting body gain boosting to increase thesmall-signal output resistance. As a distinctive feature, the proposedscheme allows the OTA transconductance to be tuned viathe current biasing the gain-boosting circuit. The proposed transconductorhas been designed in a 0.13-µm CMOS technologyand powered from a 1.2-V supply. To show a possible application,a 0.5-MHz tunable third order Chebyshev low pass filter suitablefor the Ultra Low Power Bluetooth Standard has been designed.The filter simulations show that all the requirements of the chosenstandard are met, with good performance in terms of linearity,noise and power consumption.