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Sub-Nanoampere One-Shot Single Electron Transistor Readout Electrometry Below 10 Kelvin

机译:低于10开尔文的亚纳安培单射单电子晶体管读出静电计

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The Single Electron Transistor holds the potential to be a suitable readout device for future solid-state quantum computers. The low temperature measurement results of a 0.5 $mu{rm m}$ Silicon-On-Sapphire CMOS circuit designed to interface with a Single Electron Transistor are presented. Careful design of the experimental set-up is critical for conducting the circuit test and performance measurements at cryogenic temperatures. The circuit operates at 4 K and achieves single-shot readout with a resolution in the order of one nanoampere. A detection delay as low as 1.5 $mu{rm s}$ is recorded while dissipating only 20–30 $mu{rm W}$ power.
机译:单电子晶体管有潜力成为未来固态量子计算机的合适读出设备。 0.5 $ mu {rm m} $ 蓝宝石硅CMOS电路的低温测量结果提出了单电子晶体管。仔细设计实验装置对于在低温下进行电路测试和性能测量至关重要。该电路在4 K下工作,可实现单次读数,分辨率约为1纳安。记录的检测延迟低至1.5 $ mu {rm s} $ ,而仅耗散20–30 $ mu {rm W} $ 次幂。

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