Single electron transistor with controllable quantum dot size, an integration of single electron transistor and double-gate MOSFET, and fabrication method thereof, respectively

摘要

PURPOSE: A single electron transistor is provided to control the size of a quantum dot by forming the first gate on the sidewall of a channel and by adjusting the height of the first gate left on the sidewall of the channel in etching the first gate material. CONSTITUTION: An insulator is formed on a substrate support unit. Source and drain regions are formed of single crystalline silicon, separated from each other on the insulator. A channel formed of single crystalline silicon is formed on the insulator, connected to the source region and the drain region. The first insulation layer is deposited on the channel and a part of the source and drain regions in a straight line with the channel. The first gate insulation layer(36) is deposited on both sidewalls of the channel and on the sidewall of the source and drain regions. The first gate(37) is formed on a part of both sidewalls of the channel over the first gate insulation layer and on the sidewall of the source and drain. The second gate insulation layer(38) is deposited on the first gate and a part of both sidewalls of the channel wherein the first gate is not formed. The second gate(39) surrounds the channel over the second gate insulation layer and the first insulation layer, formed between the source and drain regions.