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A New PVT Compensation Technique Based on Current Comparison for Low-Voltage, Near Sub-Threshold LNA

机译:基于电流比较的低压,近亚阈值LNA的PVT补偿新技术

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When conventional biasing topologies are employed, near sub-threshold operated amplifiers show large performance deviations under unavoidable PVT variations. Moreover, these effects become severe when these circuits are implemented in sub-nanometer technologies. This paper introduces a new type of compensation technique to realize a reliable low voltage, low-noise amplifier that is achieved by stabilizing the core device trans-conductance . To minimize the variation, the proposed technique uses an error voltage generated by comparing the LNA current with a stable constant current reference (CCR). Not only the compensation circuits, a new low-voltage self-biased CCR source is also introduced which is based on conventional multiplier that can operate with a voltage as low as 0.4 V with a resulting TC (temperature coefficient) of 118 ppm/ for typical-typical corner case. The and of the compensated 65 nm LNA core device shows 8 times lower variations compared to that of a conventional one when temperature varies from 20 to and with the consideration of five process corner cases. Finally, Monte Carlo estimation for both process and mismatch shows 34% reduction in standard deviation of and 20% improvement in yield compare- to a conventionally biased LNA. The compensated LNA with all its accessories consumes only 402 power when operated at a supply voltage of 0.6 V.
机译:当采用常规偏置拓扑结构时,在无法避免的PVT变化下,接近亚阈值工作的放大器表现出较大的性能偏差。此外,当这些电路以亚纳米技术实现时,这些影响变得严重。本文介绍了一种新型的补偿技术,可通过稳定核心设备的跨导来实现可靠的低电压,低噪声放大器。为了使变化最小,所提出的技术使用通过将LNA电流与稳定的恒定电流基准(CCR)进行比较而生成的误差电压。不仅补偿电路,还引入了一种新的低压自偏置CCR源,它基于常规乘法器,可以在低至0.4V的电压下工作,典型的TC(温度系数)为118 ppm /。 -典型的角套。补偿后的65 nm LNA核心器件在温度从20摄氏度变化到10摄氏度并考虑到5个工艺极限情况时,其变化是传统器件的8倍以下。最后,与传统的偏置LNA相比,蒙特卡洛对过程和失配的估计均显示标准偏差降低了34%,良率提高了20%。补偿LNA及其所有附件在0.6 V的电源电压下工作时仅消耗402功率。

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