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Combined SEU and SEFI Protection for Memories Using Orthogonal Latin Square Codes

机译:使用正交拉丁方码对内存进行SEU和SEFI组合保护

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Radiation effects cause several types of errors on memories including single event upsets (SEUs) or single event functional interrupts (SEFIs). Error correction codes (ECCs) are widely used to protect against those errors. For a number of reasons, there is a large interest in using double data rate type three (DDR-3) synchronous dynamic random-access (SDRAM) memories in space applications. Radiation testing results show that these memories will suffer both SEUs and SEFIs when used in space. Protection against a SEFI and an SEU is needed to achieve high reliability. In this paper, a method to protect 16-bit and 64-bit data word memories composed of 8-bit memory devices against a simultaneous SEFI and an SEU is presented. The scheme uses orthogonal Latin square (OLS) codes and can be activated when a SEFI occurs, using a conventional double error correction approach otherwise.
机译:辐射效应会在存储器上引起多种类型的错误,包括单事件翻转(SEU)或单事件功能中断(SEFI)。纠错码(ECC)被广泛用于防止这些错误。由于多种原因,在空间应用中使用双倍数据速率类型三(DDR-3)同步动态随机存取(SDRAM)存储器引起了人们极大的兴趣。辐射测试结果表明,这些存储器在太空中使用时会同时遭受SEU和SEFI的影响。为了获得高可靠性,需要针对SEFI和SEU进行保护。本文提出了一种保护由8位存储器件组成的16位和64位数据字存储器免受同时SEFI和SEU攻击的方法。该方案使用正交拉丁方(OLS)码,并且可以在发生SEFI时激活,否则可以使用常规的双纠错方法。

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