首页> 外文期刊>Microelectronics & Reliability >Extend orthogonal Latin square codes for 32-bit data protection in memory applications
【24h】

Extend orthogonal Latin square codes for 32-bit data protection in memory applications

机译:扩展正交拉丁方码以在存储器应用中实现32位数据保护

获取原文
获取原文并翻译 | 示例

摘要

As CMOS technology size scales down, multiple cell upsets (MCUs) caused by a single radiation particle have become one of the most challenging reliability issues for memories used in space application. Error correction codes (ECCs) are commonly used to protect memories against errors. Single error correction-Double error detection (SEC-DED) codes are the simplest and most typical ones, but they can only corrected single errors. The advanced ECCs, which can provide enough protection for memories, cost more overhead due to their complex decoders. Orthogonal Latin square (OLS) codes are one type of one-step majority logic decodable (OS-MLD) codes that can be decoded with low complexity and delay. However, there are no OLS codes directly fitting 32-bit data, which is a typical data size in memories. In this paper, (55, 32) and (68, 32) codes derived from (45, 25) and (55, 25) OLS codes have been proposed in order to improve OLS codes in terms of protection for the 32-bit data. The proposed codes can maintain the correction capability of OLS codes and be decoded with low delay and complexity. The evaluation of the implementations for these codes are presented and compared with those of the shortened version (60, 32) and (76, 32) OLS codes. The results show that the area and power of a 2-bit MCUs immune radiation hardened SRAM that protected by the proposed codes have been reduced by 7.76% and 6.34%, respectively. In the case of a 3-bit MCUs immune, the area and power of whole circuits have been reduced by 8.82% and 4.56% when the proposed codes ate used. (C) 2016 Elsevier Ltd. All rights reserved.
机译:随着CMOS技术尺寸的缩小,由单个辐射粒子引起的多个单元翻转(MCU)已成为空间应用中使用的存储器面临的最具挑战性的可靠性问题之一。纠错码(ECC)通常用于保护内存免受错误侵害。单一错误纠正-双重错误检测(SEC-DED)代码是最简单和最典型的代码,但它们只能纠正单一错误。可以为存储器提供足够保护的高级ECC由于其复杂的解码器而花费更多的开销。正交拉丁方(OLS)码是一种单步多数逻辑可解码(OS-MLD)码,可以以低复杂度和低延迟进行解码。但是,没有OLS代码直接适合32位数据,这是存储器中的典型数据大小。在本文中,提出了从(45,25)和(55,25)OLS代码派生的(55,32)和(68,32)代码,以便在保护32位数据方面改进OLS代码。 。所提出的代码可以保持OLS代码的校正能力,并且以低延迟和复杂度被解码。介绍了对这些代码的实现的评估,并将其与简化版本(60,32)和(76,32)OLS代码的评估进行比较。结果表明,受建议代码保护的2位MCU免疫辐射硬化SRAM的面积和功率分别降低了7.76%和6.34%。在使用3位MCU的情况下,使用建议的代码后,整个电路的面积和功率分别减少了8.82%和4.56%。 (C)2016 Elsevier Ltd.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号