机译:STT-MRAM存储器中基于参考的少和鲁棒读取的基于时间的传感
Department of Electrical and Computer Engineering, National University of Singapore, Singapore;
A*STAR, Data Storage Institute, Singapore;
Department of Electrical and Computer Engineering, National University of Singapore, Singapore;
Sensors; Latches; Magnetic tunneling; Semiconductor device modeling; Delays; Time-domain analysis; Robustness;
机译:具有STT-MRAM的放大位线电压的动态读取电流检测
机译:新型抗变态STT-MRAM的升压感应方案
机译:存取时间缩短39%,能耗降低11%,32 kbit 1读/ 1写2端口静态随机存取存储器,采用两级读增强和读感应方案后的写升压
机译:通过Smash Read和Flexible Read提高基于STT-MRAM的主存储器的读取性能
机译:改进相变存储器(PCM)和自旋扭矩传递磁性RAM(STT-MRAM)作为下一代存储器:电路角度。
机译:低VDD场景PVT-AWARE STT-MRAM传感电路的研究
机译:1具有低内存要求的鲁棒遥感静止图像编码
机译:Human Read -machine阅读缩微胶片大容量记忆系统。