Spin Transfer Torque Magnetoresistive RAM (STT-MRAM) has been recently deemed as one promising main memory alternative for high-end mobile processors. With process technology scaling, the amplitude of write current approaches that of read current in deep sub-micrometer STT-MRAM arrays. As a result, read disturbance errors (RDEs) emerge. Both high current restore required (HCRR) reads and low current long latency (LCLL) reads can guarantee read reliability and utterly remove RDEs. However, both of them degrade system performance, because of extra restores or a longer read latency. And neither of them always achieves the better performance when running a wide variety of applications. In this paper, we present two architectural techniques to boost read performance for STT-MRAM based main memories in the presence of RDEs. We first propose Smash Read (S-RD) to shorten the latency of HCRR reads by injecting a larger read current. We further introduce Flexible Read (F-RD) to dynamically adopt different types of read schemes, S-RD and LCLL, to maximize main memory system performance. On average, our techniques improve system performance by 9~13% and reduces total energy by 4~8% over all existing read schemes including HCRR and LCLL.
展开▼
