Diamond Heat Spreader Layer for High-Power Thin-GaN Light-Emitting Diodes

摘要

A diamond-coating layer is studied as a heat spreading layer for a thin-GaN light-emitting diode (LED) chip. Our results show that this diamond layer can effectively spread the heat and improve the temperature uniformity of a thin-GaN LED chip, which enhances the heat dissipation efficiency down to the heat sink. With the diamond heat spreading layer, the junction temperature of the thin-GaN LED was reduced by 20 $^{circ}$ C at 1-A current input and the uniformity of the temperature distribution is also greatly improved.