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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A Self-Calibrating Delay-Locked Delay Line With Shunt-Capacitor Circuit Scheme
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A Self-Calibrating Delay-Locked Delay Line With Shunt-Capacitor Circuit Scheme

机译:具有并联电容器电路方案的自校准延迟锁定延迟线

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摘要

This paper describes a CMOS 32-tap delay-locked delay line, realized with a shunt-capacitor circuit scheme, with an on-chip calibration circuit that allows the on-field reduction of the delay-line differential nonlinearity (DNL) down to values close to 1%. The cells are calibrated one by one in a serial way and the silicon area occupied by the calibration circuit is roughly the same as that occupied by the delay line itself. The prototype chips, realized with a 0.6-μm CMOS technology, demonstrate the feasibility and effectiveness of the technique with a great reduction of the delay-line DNL. The nonlinearity calibration technique presented in this paper is of general use since the number and area of the shunt-capacitor configurable loads can be properly chosen according to the process mismatch parameters and the desired calibration range and resolution.
机译:本文介绍了一种采用分流电容器电路方案实现的CMOS 32抽头延迟锁定延迟线,其片内校准电路可将延迟线差分非线性(DNL)现场减小至值接近1%。单元被一个接一个地校准,校准电路所占据的硅面积与延迟线本身所占据的硅面积大致相同。采用0.6-μmCMOS技术实现的原型芯片证明了该技术的可行性和有效性,并且大大减少了延迟线DNL。由于可以根据过程失配参数以及所需的校准范围和分辨率适当选择并联电容器可配置负载的数量和面积,因此本文中介绍的非线性校准技术是通用的。

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