High-voltage sustaining structure with embedded oppositely dopedregions

摘要

A voltage-sustaining structure with embedded oppositely dopednislands is proposed. Due to the compensation of the field induced bynthese regions, the doping density of the voltage-sustaining layer can benmade larger than that in a conventional voltage-sustaining layer withnthe same breakdown voltage, and therefore the on-voltage can be reduced.nThe theory of design for such structures is found to be in goodnagreement with the results of full 2-dimensional simulation. Thenon-state performance, the transient behaviour and the potentialnapplications of this structure in power devices are also discussed