High-voltage sustaining structure with embedded oppositely doped regions

摘要

A voltage-sustaining structure with embedded oppositely doped islands is proposed. Due to the compensation of the field induced by these regions, the doping density of the voltage-sustaining layer can be made larger than that in a conventional voltage-sustaining layer with the same breakdown voltage, and therefore the on-voltage can be reduced. The theory of design for such structures is found to be in good agreement with the results of full 2-dimensional simulation. The on-state performance, the transient behaviour and the potential applications of this structure in power devices are also discussed.