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Zero-bias and low-chirp, monolithically integrated 10 Gbit/s DFB laser and electroabsorption modulator on semi-insulating InP substrate

机译:零偏置,低-,单片集成10 Gbit / s DFB激光器和电吸收调制器,位于半绝缘InP衬底上

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摘要

A DFB-laser monolithically integrated with a short (150 /spl mu/m) bulk electroabsorption (EA) modulator has been developed on a semi-insulating substrate. An extinction ratio of 10 dB for 0 to -2 V modulation was obtained with low chirp. Penalty-free 10 Gbit/s transmission over 41 km standard fibre, and 2.5 dB penalty over 71 km standard fibre was achieved.
机译:已经在半绝缘基板上开发了与短(150 / spl mu / m)本体电吸收(EA)调制器整体集成的DFB激光。在低线性调频的情况下,对于0至-2 V调制,消光比为10 dB。在41公里标准光纤上实现了无惩罚的10 Gbit / s传输,在71公里标准光纤上实现了2.5 dB的惩罚。

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